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| SUM60N10-17 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET PRODUCT SUMMARY VDS (V) 100 RDS(on) () 0.0165 at VGS = 10 V 0.019 at VGS = 6 V ID (A) 60 56 FEATURES * * * * TrenchFET(R) Power MOSFETS 175 C Junction Temperature New Low Thermal Resistance Package PWM Optimized for Fast Switching RoHS COMPLIANT APPLICATIONS * Isolated DC/DC converters - Primary-Side Switch D TO-263 G G DS S Top View Ordering Information: SUM60N10-17-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 175 C) Pulsed Drain Current Avalanche Current Single Pulse Avalanche Energy Maximum Power Dissipationb Operating Junction and Storage Temperature Range b Symbol VDS VGS TC = 25 C TC = 125 C ID IDM IAS L = 0.1 mH TC = 25 C TA = 25 Cd EAS PD TJ, Tstg Limit 100 20 60a 34a 100 40 80 150c 3.75 - 55 to 175 Unit V A mJ W C THERMAL RESISTANCE RATINGS Parameter Junction-to-Ambient Junction-to-Case (Drain) Notes: a. Package limited. b. Duty cycle 1 %. c. See SOA curve for voltage derating. d. When Mounted on 1" square PCB (FR-4 material). Document Number: 72070 S-81224-Rev. B, 02-Jun-08 www.vishay.com 1 PCB Mount (TO-263)d Symbol RthJA RthJC Limit 40 1.0 Unit C/W SUM60N10-17 Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currenta VDS VGS(th) IGSS IDSS ID(on) VDS = 0 V, ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 80 V, VGS = 0 V VDS = 80 V, VGS = 0 V, TJ = 125 C VDS = 80 V, VGS = 0 V, TJ = 175 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 30 A Drain-Source On-State Resistancea RDS(on) VGS = 6 V, ID = 20 A VGS = 10 V, ID = 30 A, TJ = 125 C VGS = 10 V, ID = 30 A, TJ = 175 C Forward Transconductance Dynamicb Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Chargec Gate-Source Charge Gate-Drain Chargec Gate Resistance Turn-On Delay Time Rise Timec Turn-Off Delay Timec Fall Timec Continuous Current Pulsed Current Forward Voltagea Reverse Recovery Time Peak Reverse Recovery Current Reverse Recovery Charge c c a Symbol Test Conditions Min. 100 2 Typ. Max. Unit 4 100 1 50 250 V nA A A 100 0.013 0.015 0.0165 0.019 0.031 0.041 25 4300 gfs Ciss Coss Crss Qg Qgs Qgd RG td(on) tr td(off) tf IS ISM VSD trr IRM(REC) Qrr VDS = 15 V, ID = 30 A S VGS = 0 V, VDS = 25 V, f = 1 MHz 450 175 65 100 pF VDS = 50 V, VGS = 10 V, ID = 60 A 25 19 1.5 15 25 20 45 15 60 100 nC VDD = 50 V, RL = 1.5 ID 60 A, VGEN = 10 V, RG = 2.5 12 30 10 ns Source-Drain Diode Ratings and Characteristics TC = 25 Cb A V ns A C IF = 30 A, VGS = 0 V IF = 50 A, dI/dt = 100 A/s 1.0 125 8 0.5 1.5 200 12 1.2 Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 72070 S-81224-Rev. B, 02-Jun-08 SUM60N10-17 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 120 VGS = 10 thru 7 V 100 I D - Drain Current (A) I D - Drain Current (A) 6V 100 120 80 80 60 60 40 5V 20 4V 0 0 2 4 6 8 10 40 TC = 125 C 20 25 C - 55 C 0 0 1 2 3 4 5 6 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 160 TC = - 55 C g fs - Transconductance (S) 120 25 C R DS(on) - On-Resistance () 0.020 0.025 Transfer Characteristics 0.015 VGS = 10 V 125 C 80 0.010 40 0.005 0 0 15 30 45 60 75 90 0.000 0 20 40 60 80 100 120 ID - Drain Current (A) ID - Drain Current (A) Transconductance 6000 20 On-Resistance vs. Drain Current VGS - Gate-to-Source Voltage (V) 5000 Ciss C - Capacitance (pF) 4000 16 VDS = 50 V ID = 60 A 12 3000 8 2000 1000 Crss 4 Coss 0 0 20 40 60 80 100 0 0 30 60 90 120 VDS - Drain-to-Source Voltage (V) Qg - Total Gate Charge (nC) Capacitance Document Number: 72070 S-81224-Rev. B, 02-Jun-08 Gate Charge www.vishay.com 3 SUM60N10-17 Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.5 VGS = 10 V ID = 30 A 2.0 R DS(on) - On-Resistance I S - Source Current (A) 100 (Normalized) 1.5 10 TJ = 150 C TJ = 25 C 1.0 0.5 0.0 - 50 1 - 25 0 25 50 75 100 125 150 175 0 0.3 0.6 0.9 1.2 TJ - Junction Temperature (C) VSD - Source-to-Drain Voltage (V) On-Resistance vs. Junction Temperature Source-Drain Diode Forward Voltage 130 ID = 10 A 125 R DS(on) - On-Resistance 120 (Normalized) 115 110 105 100 95 - 50 - 25 0 25 50 75 100 125 150 175 TJ - Junction Temperature (C) On-Resistance vs. Junction Temperature www.vishay.com 4 Document Number: 72070 S-81224-Rev. B, 02-Jun-08 SUM60N10-17 Vishay Siliconix THERMAL RATINGS 80 1000 Limited by R DS(on)* 60 I D - Drain Current (A) I D - Drain Current (A) 100 10 s 100 s 10 1 ms 10 ms 1 TC = 25 C Single Pulse 100 ms DC 40 20 0 0 25 50 75 100 125 150 175 0.1 0.1 1 10 100 1000 TC - Ambient Temperature (C) Maximum Avalanche and Drain Current vs. Case Temperature VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which rDS(on) is specified Safe Operating Area 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?72070. Document Number: 72070 S-81224-Rev. B, 02-Jun-08 www.vishay.com 5 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1 |
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